Laser induced growth of Cd 1-xMn xTe and CdTeCd 1-xMn xTe superlattices

We report on the basic properties of Cd _1-xMn _xTe and CdTeCd _1-xMn _xTe multilayer structures and superlattices grown by pulsed laser evaporation and epitaxy (PLEE). Two computer controlled XeCl and Nd:YAG lasers are used for simultaneous or sequential vaporization of high-purity polycrystalline targets. The layers are grown on (001) oriented InSb and CdZnTe wafers held at a temperature in the range of 200 - 240 °C. In-situ reflection high energy electron diffraction, scanning electron microscopy, energy dispersive x-ray analysis, secondary ion mass spectroscopy, transmission electron microscopy and double crystal x-ray diffraction results have demonstrated that high quality PLEE layers and superlattices can be routinely grown.