We report on hydrogenate amorphous silicon (a-Si:H) films as unique passivation films for crystal silicon (C-Si) devices used on the thyristor elements. It's shown that a-Si:H passivation films could be used to raise the forward and reverse breakdown voltage over a wide range, as well as to improve the high temperature feature for thyristor elements. There are economic results. The a-Si:H passivation films have a novel ability to attract the impurities from the interface of c-Si device to the a-Si:H films and promote the c-Si devices with high quality. We also discuss the thermal stability of a-Si:H passivation films.
Intl Conf on Thin Film Physics and Applications
- Pub Date:
- November 1991