High voltage pulse generation using current mode second breakdown in a bipolar junction transistor
Abstract
The characteristics of a bipolar junction transistor operating in the avalanche region and then triggered into current mode second breakdown are formulated. If the time the BJT is subjected to secondary breakdown is limited the BJT may be used as a nanosecond, high voltage switch without sustaining damage. Several methods of fast pulse generation, electrical and optical, using this mode of operation are discussed. A 2000 V pulse generator, into 50 Ω, with a risetime of approximately 1 ns, jitter <100 ps, is then designed using these results.
- Publication:
-
Review of Scientific Instruments
- Pub Date:
- April 1991
- DOI:
- 10.1063/1.1142054
- Bibcode:
- 1991RScI...62.1031B