Hydrogen implantation in semiconductors

Proton implantation is presented as a versatile tool for hydrogen-doping of semiconductors. The paper shows the advantages as well as disadvantages of this technique: precise spatial distribution and hydrogen concentrations obtained up to the non-equilibrium states are possible because of the damages introduced during the slowing down of protons. Some examples of experimental results obtained by proton implantation are discussed in detail. The review is also intended to serve as a source of key references in the field.