Theory of ballistic-electron-emission spectroscopy of NiSi2/Si(111) interfaces
Abstract
We discuss theoretical calculations of ballistic-electron-emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution. We present a specific application to A- and B-type NiSi2/Si(111) interfaces showing a factor three difference between them at low voltages.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 1991
- DOI:
- 10.1103/PhysRevLett.66.3179
- Bibcode:
- 1991PhRvL..66.3179S
- Keywords:
-
- Electron Emission;
- Electron Spectroscopy;
- Nickel Compounds;
- Silicon Compounds;
- Solid-Solid Interfaces;
- Brillouin Zones;
- Silicon;
- Solid-State Physics;
- 73.40.-c;
- 72.10.Bg;
- 73.20.-r;
- Electronic transport in interface structures;
- General formulation of transport theory;
- Electron states at surfaces and interfaces