A new universality class for kinetic growth: One-dimensional molecular-beam epitaxy
Abstract
We study a new model for kinetic growth motivated by the physics of molecular-beam epitaxy where the deposited atoms can relax to kink sites maximizing the number of saturated bonds. The model is thus intermediate between the well-known random-deposition model with no relaxation and the random-deposition model with perfect relaxation, producing growth exponents which are in between these two extremes. In particular, the growth exponent β, defining the interface width W~tβ at intermediate times, is found to be β~=0.375+/-0.005 in d=1+1 dimensions. Our estimated α for this model is around 1.5 for 1+1 dimensions.
- Publication:
-
Physical Review Letters
- Pub Date:
- January 1991
- DOI:
- 10.1103/PhysRevLett.66.325
- Bibcode:
- 1991PhRvL..66..325D
- Keywords:
-
- 61.50.Cj;
- 05.40.+j;
- 05.70.Ln;
- 68.55.Bd;
- Nonequilibrium and irreversible thermodynamics