Contribution to the development of an ISFET type integrated sensor using an ASIC thread in CMOS technology

CMOS technology and the principal of MOS transistor based sensors are reviewed. The compatibility between ISFET grafting and CMOS technology is investigated. Operational principles of ISFET sensors and their polarization are addressed, and integrated circuits developed for the integration of a polarization and measurement system are presented. Specific structures developed for components used in CMOS analog circuits are detailed. A program developed for the automization of CMOS analog circuit masks is described. Results obtained for sensors based on the piezotransistor effect in CMOS technology are presented in annex; this type of sensor was studied in parallel with the ISFETs. Mechanical difficulties limiting the study are shown.