Impact of temperature changes in the representation accuracy of x ray lithography for the production of integrated circuits

The influence of exposure on the image accuracy of X-ray lithography is examined. The temperature changes of the mask during the exposure and the thermoelectric potentials of the resulting delays are considered. The temperature distribution of the masks under stationary and dynamic exposure conditions is measured with an infrared camera. The results show that the temperature of the mask is determined by the thermal diffusion length in the mask and the absorber covering. It is shown that the temperature changes of the mask during the exposure represents no limitation of image accuracy for X-ray lithography.