Study and realization of GaAs PNP homojunction bipolar transistors using ion implementation

The PNP homojunction bipolar transistor and the use of ion implantation to the device manufacture are considered. The study is based on Vannel's work on 2L integrated circuits based on GaAlAs/GaAs. In this type of logic, the basic cell is an NPN transistor with a current source which can be either a resistance or a PNP bipolar transistor. The mechanisms which guide the PNP homojunction transistor behavior are discussed. Several theories for each ion studied, that is, silicon as N type and magnetism as P type are presented. The software developed from modeling are described. The different technological ways available for the ion implantation analysis and for the characterization of implanted layers are described. The experimental study of Mg and Si implants is carried out. The implanted profiles were compared to those obtained from the modeling. The GaAs PNP bipolar transistor manufacture is presented. The technological process are described for two structure types, planar and mesa, and results from the electrical characterization associated are included.