Spectroscopic studies of layered and bulk semiconductor materials

Spectroscopic studies of semiconductor materials investigating both bulk and layered structure properties are described. The spectroscopic techniques used, Raman scattering, photoluminescence and optically detected magnetic resonance, are reviewed. The modeling of lattice matched In(x)Ga(1-x)As(y)P(1-y)/InP quantum wells for application in 1.5 micron telecommunication lasers, and the effects of strain in non lattice matched In(x)Ga(1-x)As/InP quantum wells, are described. Raman spectroscopy of Si/Ge superlattices is described. An optically detected magnetic resonance study of the effective mass donor system in Al(x)Ga(1-x)As is presented. The results of a photoluminescence study of Zn diffused InP are given.