Alloying silicon carbide by nitrogen during crucibleless liquid epitaxy
Abstract
A method is proposed for the controlled alloying of SiC by a donor impurity (nitrogen) during crucibleless liquid epitaxy. The alloying is carried out by injecting nitrogen gas into the reactor during the epitaxial growth process, with the nitrogen pressure varying from 0.0005 to 0.1 mm Hg. It is shown that the concentration N(D)-N(A) in the alloyed layers changes from 8x10 to the 16th to 10 to the 19th/cu cm as nitrogen pressure within the reactor changes from 0.0005 to 0.1 mm Hg.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- February 1991
- Bibcode:
- 1991PZhTF..17...43D
- Keywords:
-
- Containerless Melts;
- Liquid Phase Epitaxy;
- Nitrogen;
- Silicon Carbides;
- P-N Junctions;
- Single Crystals;
- Substrates;
- Solid-State Physics