Effects of rapid thermal annealing on InP layers grown on GaAs substrates by gas-source molecular beam epitaxy
Abstract
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- January 1991
- DOI:
- 10.1116/1.585283
- Bibcode:
- 1991JVSTB...9..176R