Electrical Characterization of Undoped and Boron-Doped Polycrystalline Diamond Thin Films
Abstract
Undoped and boron-doped polycrystalline diamond thin films have been grown on silicon substrates using microwave plasma-assisted chemical vapor deposition. Current voltage characteristics of diamond thin films have been measured as a function of annealing in nitrogen gas and hydrogen microwave plasma treatments. Scanning electron microscopy and Raman spectroscopy are used to analyze the nature of films before and after the treatments.
- Publication:
-
Journal of the Electrochemical Society
- Pub Date:
- October 1991
- DOI:
- 10.1149/1.2085352
- Bibcode:
- 1991JElS..138.2981R
- Keywords:
-
- Boron;
- Diamonds;
- Doped Crystals;
- Polycrystals;
- Thin Films;
- Volt-Ampere Characteristics;
- Annealing;
- Electron Microscopy;
- Hydrogen;
- Microwave Plasma Probes;
- Nitrogen;
- Raman Spectroscopy;
- Solid-State Physics