Diffusion limited dark current in as-implanted (Hg, Cd)Te photodiodes
Abstract
High detector performance of (Hg, Cd)Te photodiodes requires small dark currents in the structures. For the first time we have observed as-implanted (Hg, Cd)Te photodiodes offering r0A products near to theoretical limits. The pn-junction was obtained by ion implantation through a Al 2O 3 passivation layer.
- Publication:
-
Infrared Physics
- Pub Date:
- 1991
- DOI:
- 10.1016/0020-0891(91)90028-E
- Bibcode:
- 1991InfPh..31..493M
- Keywords:
-
- Aluminum Oxides;
- Ion Implantation;
- Mercury Cadmium Tellurides;
- P-N Junctions;
- Photodiodes;
- Infrared Detectors;
- Passivity;
- Semiconductor Devices;
- Solid-State Physics