dc conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures
Abstract
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1991
- DOI:
- 10.1109/22.81681
- Bibcode:
- 1991ITMTT..39.1054R
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Conduction;
- Heterojunction Devices;
- Noise Spectra;
- Volt-Ampere Characteristics;
- Direct Current;
- Gallium Arsenides;
- Low Temperature;
- Noise Measurement;
- Room Temperature;
- Electronics and Electrical Engineering