Ka-band monolithic amplifier using 0.5 micron gate length ion-implanted GaAs/AlGaAs heterojunction FET technology

Monolithic, two-stage amplifiers using 0.5 x 80 sq micron gate GaAs/AlGaAs heterojunction FETs have been developed for Ka-band operation. These monolithic two-stage amplifiers were fabricated using ion implantation for the active layer and optical lithography for the 0.5 micron gate length. MMIC two-stage amplifiers achieved average gains of 12.6 +/- 1.4 dB at 30 GHz and 8.8 +/- 2.0 dB at 40 GHz, respectively, for all 39 sites across a three-inch diameter wafer. These are the first reported results the MMIC two-stage amplifiers using 0.5 micron gate length ion-implanted GaAs/AlGaAs heterojunction FETs achieved over 10 dB gain at Ka band.