Integrated npn/pnp GaAs/AlGaAs HBTs grown by selective MBE
Abstract
npn and pnp GaAs/AlGaAs heterojunction bipolar transistors have been successfully fabricated on the same GaAs substrate using selective molecular beam epitaxy and a new merged HBT processing technology. The dc and microwave characteristics of the transistors are equivalent to those of similar HBTs grown by conventional MBE on separate GaAs substrates.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1991
- DOI:
- 10.1049/el:19910953
- Bibcode:
- 1991ElL....27.1517U
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Heterojunction Devices;
- Molecular Beam Epitaxy;
- N-P-N Junctions;
- P-N-P Junctions;
- Frequency Response;
- Gallium Arsenides;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering