Epitaxial silicon deposition at 300 °C with remote plasma processing using SiH4/H2 mixtures
Abstract
Epitaxial Si films have been deposited on Si(100) at 300 °C by remote plasma-enhanced chemical vapor deposition using SiH4/H2 mixtures with deposition rates as high as 25 Å/min at these low temperatures. Hall measurements of the film show an unintentional doping level of about 1×1017 cm-3 with electron mobilities of 700 cm2 V-1s-1. Critical to the process is the in situ cleaning of the silicon substrate surface prior to deposition.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 1991
- DOI:
- 10.1063/1.105589
- Bibcode:
- 1991ApPhL..59..339H
- Keywords:
-
- Binary Mixtures;
- Epitaxy;
- Hydrogen;
- Plasma Chemistry;
- Semiconducting Films;
- Silanes;
- Silicon;
- Substrates;
- Vapor Deposition;
- Solid-State Physics