AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy
Abstract
Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm-2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers.
- Publication:
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Applied Physics Letters
- Pub Date:
- May 1991
- DOI:
- Bibcode:
- 1991ApPhL..58.2208W
- Keywords:
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- Aluminum Gallium Arsenides;
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Indium Gallium Arsenides;
- Quantum Wells;
- Semiconductor Diodes;
- Continuous Wave Lasers;
- Metalorganic Chemical Vapor Deposition;
- Superlattices;
- Vapor Phase Epitaxy;
- Lasers and Masers