Semiconductor heterojunction device with graded bandgap

This invention relates generally to rectifying junction types of semiconductor devices and more particularly to a heterojunction structure with a graded gap region at its interface. Semiconductor rectifying junction devices are widely utilized in electronic and electro-optic installations, including by way of example infrared photovoltaic detectors. The most commonly utilized semiconductor devices are of the p-n junction and Schottky junction types. In the p-n junction device, p-type and n-type classes of materials are deposited on each other and arranged to minimize migration of dopants across the junction.