Integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects
Abstract
GaAs layers have been grown on silicon substrates by Molecular Beam Epitaxy (MBE), from which photoconductive circuit elements (PCE) have been fabricated. A fabrication procedure will be described which is fully compatible with standard silicon IC processing technology. Results will be presented demonstrating the reliance of GaAs PCE performance on epitaxial growth conditions and subsequent processing steps. PCE response speeds ranging from less than 10 ps to 60 ps have been observed.
- Publication:
-
Presented at the 3rd International Congress on Optical Science and Engineering
- Pub Date:
- 1990
- Bibcode:
- 1990ose..cong...12M
- Keywords:
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- Circuits;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Photoconductors;
- Semiconductor Devices;
- Fabrication;
- Optical Equipment;
- Silicon;
- Substrates;
- Solid-State Physics