The 1/f noise in irradiated MOS devices
Abstract
The 1/f noise of MOS transistors was measured as a function of total ionizing dose and postirradiation biased annealing time. Comparison to oxide and interface trapped-charge buildup and annealing is discussed.
- Publication:
-
Presented at the 27th IEEE Annual International Nuclear and Space Radiation Effects Conference
- Pub Date:
- 1990
- Bibcode:
- 1990nsre.confR..16M
- Keywords:
-
- Ionizing Radiation;
- Irradiation;
- Metal Oxide Semiconductors;
- Radiation Effects;
- Radiation Hardening;
- Transistors;
- Annealing;
- Fabrication;
- Oxides;
- Spacecraft Components;
- Electronics and Electrical Engineering