Impurities, defects and diffusion in semiconductors: Bulk and layered structures, volume 163

This volume of proceedings contains manuscripts from Symposium G, entitled Impurities, Defects, and Diffusion in Semiconductors: Bulk and Layered Structures. This symposium was conceived from the view that impurities, defects, and diffusion play key roles in modern-day research and development of semiconducting materials, structures, and devices. Recent breakthroughs in materials preparation with monolayer control, in diversity and sensitivity of characterization techniques, and in new theoretical methods, have collectively led to great advances in the understanding of defect- and impurity-related phenomena.