SiC film deposited by pulsed excimer laser ablation

Thin films of (Beta) - SiC were grown on Si substrates by excimer laser pulse ablation of bulk SiC. The films were examined by Auger electron, x ray, and photoelectron spectroscopies. The film was smooth as monitored by scanning electron microscopy. Scanning electron and scanning tunneling microscopy showed inclusions in the deposited SiC film and laser ionization mass analysis detected SiC dimers in the vapor plume emitted from the target.