Physics and technology of III-V pseudomorphic structures

AlGaAs/InGaAs modulation doped field effect transistors with a nominally (InAs)2(GaAs)2 channel grown by migration enhanced epitaxy exhibit better luminescent and device properties than those with a random alloy In(0.4)Ga(0.6)As channel grown by molecular beam epitaxy (MBE). A new kinetic model was proposed and applied, which includes both group-III alkyl and group-V species in the surface chemical reactions, to the growth of GaAs, GaSb, and InAs by metalorganic MBE or chemical beam epitaxy (CBE). A gas source MBE system was set up with elemental group-III and doping sources as well as arsine and phosphine. The group-V limited growth mode was used to determine in situ the exact values of V/III atomic ratios during growth of GaP, InP, AlP, and GaAs. X ray studies of an InAlAs/InP superlattice indicates the existence of a P/As-intermixed, strained interface.