Characterization of semiconductor surface-emitting laser wafers
Abstract
The development of epitaxial semiconductor surface-emitting lasers has begun in recent years. These lasers are ultra-short (a few microns) Fabry-Perot resonators comprising epitaxial multilayer semiconductor mirrors and quantum well active regions. The resonators are single crystals grown along the lasing axis by molecular beam epitaxy (MBE) or chemical vapor deposition (CVD). They offer significant advances over conventional cleaved, edge-emitting lasers for creating lasers with single elements of 2 dimensional arrays, low beam divergence, engineered active regions, single longitudinal modes, and improved temperature characteristics. To realize the high potential of these new laser structures, techniques for characterizing the laser wafer after growth and between fabrication, steps must be developed. In this paper we discuss several optical techniques that we have developed for this emerging surface-emitting laser technology.
- Publication:
-
Presented at the 178th Meeting of the Electrochemical Society
- Pub Date:
- 1990
- Bibcode:
- 1990ecs..meet...14G
- Keywords:
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- Mirrors;
- Optical Resonators;
- Quantum Wells;
- Semiconductor Devices;
- Semiconductor Lasers;
- Surface Emitting Lasers;
- Wafers;
- Crystal Growth;
- Fabrication;
- Molecular Beam Epitaxy;
- Single Crystals;
- Vapor Deposition;
- Lasers and Masers