Simulation and nonlinear modelling of microwave transistors
Abstract
Two well known methods to simulate microwave and millimeter wave nonlinear circuits are presented. The steps required for a large signal microwave metal semiconductor field effect transistor (MESFET) modeling are described. The time domain method, which uses the solution of a system of differential equations to model the circuit, is presented. This method has a calculation time disadvantage as the circuit is strongly nonlinear. Its advantage is that it permits transient state study. The second method, based on an harmonic balance technique (time and frequency domain), allows quick determination of the steady state regime of a nonlinear microwave circuit including the output power, the voltage, and current in each branch of the circuit. Procedures required in MESFET modeling are described. The small signal measurements (S parameter) are used to obtain the intrinsic nonlinear parameters of the transistor allowing the nonlinear model to be deduced. Simulation and modeling results are presented.
 Publication:

Canadian Space Agency, 6th CASI Conference on Astronautics
 Pub Date:
 1990
 Bibcode:
 1990csa..procS....H
 Keywords:

 Field Effect Transistors;
 Mathematical Models;
 Microwave Circuits;
 Nonlinear Systems;
 Simulation;
 Differential Equations;
 Harmonic Analysis;
 Kirchhoff Law Of Networks;
 Microwave Frequencies;
 Steady State;
 Electronics and Electrical Engineering