A new device to aid in the conception and optimization of monolithic millimeter circuits: A distributed and nonliner model of a field effect transistor
Abstract
The concept of monolithic nonlinear millimeter circuits necessitates the precise modeling of semiconducting devices. For high frequency applications, the effects distributed along the length and width of the component electrodes must be taken into account, particularly when harmonic frequencies are generated. This article presents a rigorous and systematic methodology for extracting a distributed and non-linear model of a field effect transistor, which can easily be applied to nonlinear simulators which employ harmonic balancing techniques. This new model is obtained from knowledge of the equivalent localized nonlinear circuit and from the geometric dimensions of the component. The circuit is then modeled by N identical sections, each of which include a nonlinear quadripole which simulates the field effect phenomena, placed between two linear octapoles which simulate inter-electrode coupling and the phase effects.
- Publication:
-
Canadian Space Agency, 6th CASI Conference on Astronautics
- Pub Date:
- 1990
- Bibcode:
- 1990csa..procR....O
- Keywords:
-
- Field Effect Transistors;
- Integrated Circuits;
- Mathematical Models;
- Nonlinear Systems;
- Distributed Parameter Systems;
- Millimeter Waves;
- Semiconductor Devices;
- Simulators;
- Electronics and Electrical Engineering