In situ GSMBE growth monitoring for optoelectronic devices

Presented is the establishment of a semiconductor optical properties characterization facility constructed at Arizona State University under the sponsorship of an AFOSR-URIP. The fully computerized system is connected to our MBE and electrical properties characterization laboratory network and will be used for two purposes: (1) to study the properties of photonic materials and devices, and (2) to study the growth kinetics in solid source and Gas Source Molecular Beam Epitaxy (GSMBE). As a result of these efforts, a coherent research program has been established that stresses the following points: (1) collaborative research among engineering, physical science and materials science faculty specifically in the field of compound semiconductor (GaAs, AlGaAs, InGaAs and InP based) materials with emphasis on heterojunction and quantum well structures; (2) diagnostics of novel optoelectronic devices and materials; (3) interaction with our strong theoretical efforts to identify new directions MBE growth and optoelectronic and nanostructure device physics. Several productive DoD programs have been obtained which utilize the equipment for student training and technical publications. The instrumentation has provided a capability for scientific research that is unique in any U.S. university. Thus the training of students of modern instrumentation to effectively pursue present and future DoD research directions is progressing successfully.