Mathematical modeling of radiation defects in semiconductor materials
Abstract
A Monte Carlo model of the internuclear cascade is developed which simulates radiation defects (malfunctions) in semiconductor elements exposed to highenergy proton and nucleus fields. The probability of the release of a certain amount of radiation energy and its dependence on the type of the ionizing component of the cascade avalanche are investigated using as an example a semiconductor microcircuit irradiated by 3.65GeV/nucleon carbon ions and protons. The computed probability and the experimentally measured malfunction frequency in relation to the released energy make it possible to determine the time dependence of the radiationrelated malfunctions of electronic devices.
 Publication:

Zhurnal Tekhnicheskoi Fiziki
 Pub Date:
 October 1990
 Bibcode:
 1990ZhTFi..60...75B
 Keywords:

 Corpuscular Radiation;
 Energetic Particles;
 Ionizing Radiation;
 Radiation Damage;
 Semiconductor Devices;
 Energy Transfer;
 Integrated Circuits;
 Mathematical Models;
 Monte Carlo Method;
 Radiative Transfer;
 Electronics and Electrical Engineering