Infrared excitation of the subbands of A δ-layer in GaAs and Si
Abstract
We consider the resonant excitation of electronic subbands in the self-consistent potential of a sharply defined layer of donor atoms in GaAs and Si(100). The resonance energies are density-tunable and the absorption strength can readily amount to 50% or more. For Si(100) we observe a doublet of lines that represent the excitation of electrons from the inequivalent ( gv=2, gv=valleys of the conduction band.
- Publication:
-
Surface Science
- Pub Date:
- April 1990
- DOI:
- 10.1016/0039-6028(90)90302-O
- Bibcode:
- 1990SurSc.228..247T