Analysis of the effect of a uniform base drift field on the performance of a polycrystalline p/ n junction solar cell
An analytical treatment is presented for the effects of a drift field in the base region on the performance of a polycrystalline p/ n junction solar cell. The analytical expressions thus obtained are used in calculations for studying the effect of the field on the base current and recombination mechanisms for different grain sizes and cell thickness. It is shown that such field leads to a higher short circuit current, a higher open circuit voltage and a higher cell efficiency. This is effected through a reduction of all recombination mechanisms by the suggested field.