Optical transitions in quantum wires with strain-induced lateral confinement
Abstract
Nanometer-scale quantum wires have been directly produced using an epitaxial-growth technique. Modulation of the in-plane lattice constant of a GaAs/GaAlAs quantum well, grown over an InGaAs/GaAs strained-layer superlattice, laterally confines the carriers to one dimension. These novel structures are studied by luminescence and luminescence-excitation spectroscopies and by transmission electron microscopy. Large energy shifts and polarization anisotropy are observed. The results compare very well with a theoretical model based on the effective-mass approximation and elastic and phenomenological deformation-potential theories.
- Publication:
-
Physical Review Letters
- Pub Date:
- September 1990
- DOI:
- 10.1103/PhysRevLett.65.1631
- Bibcode:
- 1990PhRvL..65.1631G
- Keywords:
-
- Aluminum Gallium Arsenides;
- Epitaxy;
- Optical Properties;
- Quantum Optics;
- Cathodoluminescence;
- Electron Microscopy;
- Electron Transitions;
- Indium Arsenides;
- Quantum Wells;
- Solid-State Physics;
- 73.20.Dx;
- 78.60.Hk;
- 78.65.Fa;
- Cathodoluminescence ionoluminescence