Ion-induced adhesion enhancement of Ni films on polyester: Si intermediate layer and 84Kr + implantation
The influence of a 7 nm Si intermediate layer and 84Kr + implantation on the adhesion of 30 nm Ni films on poly[ethylene terephthalate] (PET) substrates was examined. The objective was to determine if the large (a factor of 20) adhesion increases previously observed for 28Si + implanted Ni/PET could be duplicated using a Si intermediate layer and inert gas ion mixing. Ni/Si/PET specimens were implanted with 84Kr + at substrate temperatures below 100°C to avoid polymer degradation. Substantial bubble and void formation was observed in the implanted specimens. After 1 × 10 16 Kr/cm 2 implantation, a buildup of oxygen in the Si intermediate layer was observed. The Ni that was originally present in the Si layer diffused out of the oxidized Si into the Ni overlayer, leaving a SiO x layer. This oxidized Si layer formed sharp interfaces with both the Ni films and PET substrates. X-ray photoelectron spectroscopy (XPS) analysis shows that the Ni/PET interfacial region consisted of a mixture of Ni 2Si and SiO before ion mixing and a discrete SiO 2 layer after mixing. Adhesion testing of the as-deposited and ion mixed films showed no ion-induced adhesion enhancement. It was concluded that in order to enhance the adhesion of Ni films on PET (or other oxygenated polymers) that the reactive species (Si) must be implanted into both the Ni film and the PET substrate.