The effect of growth orientation on the resolved shear stresses for horizontal bridgman grown GaAs crystals
Abstract
An effective method based on double tensor transformation is proposed for the resolved shear stress calculation in the crystals with arbitrary growth axis orientation. Employing this method the influence of the crystal orientation on the resolved shear stresses is investigated for the horizontal Bridgman grown GaAs crystals. The stress patterns give a theoretical basis for the evaluation of the role of the thermal stresses in the process of dislocation generation in these crystals.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- July 1990
- DOI:
- 10.1016/0022-0248(90)90143-9
- Bibcode:
- 1990JCrGr.104..428D
- Keywords:
-
- Bridgman Method;
- Crystal Growth;
- Crystal Structure;
- Edge Dislocations;
- Gallium Arsenides;
- Shear Stress;
- Cartesian Coordinates;
- Czochralski Method;
- Thermal Stresses;
- Solid-State Physics