A comparison of Hg 1-xCd xTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates

Epitaxial layers of Hg _{1- x}Cd _xTe have been grown by metalorganic chemical vapor deposition (MOCVD) with the interdiffused multilayer process using the tellurium precursor diisopropyltelluride. A comparison is made of the structural quality of the films on lattice-matched substrates of (CdZn)Te and Cd(TeSe) using X-ray diffraction techniques. The interdiffused technique using deposition rates in excess of 10 μm/h is not detrimental to the crystal quality, and Hg _{1- x}Cd _xTe was grown of comparable quality to that of the substrate. The epilayers are free of twinning and have the lowest values of rocking curve widths reported for MOCVD Hg _{1- x}Cd _xTe. The as-grown films were p-type at 77 K, consistent with an anticipated mercury vacancy concentration of 7 x 10 ¹⁶ cm ^-3.