MOVPE of narrow and wide gap II VI compounds
Abstract
The development of high quality II-VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as iPr 2Te, tBu 2Te, Me(allylTe and (allyl) 2Te for low temperature growth, substrates including CdZnTe, CdTe, CdTeSe, GaAs on Si for epitaxy, doping for p-n junction formation and photo-assisted growth processes for low temperature growth, photo-patterning and selected area deposition.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- April 1990
- DOI:
- 10.1016/0022-0248(90)90929-F
- Bibcode:
- 1990JCrGr.101....1M
- Keywords:
-
- Doped Crystals;
- Energy Gaps (Solid State);
- Epitaxy;
- P-N Junctions;
- Tellurides;
- Vapor Deposition;
- Cadmium Tellurides;
- Crystal Growth;
- Gallium Arsenides;
- Mercury Cadmium Tellurides;
- Photochemical Reactions;
- Silicon;
- Zinc Tellurides;
- Solid-State Physics