Amorphization and regrowth in Si/CoSi2/Si heterostructures
Abstract
Reduction of the defect density in the Si overlayer of Si/CoSi2/Si heterostructures fabricated by mesotaxy has been achieved by selective amorphization and regrowth of the Si. Layer-by-layer regrowth of the silicide with an activation energy of 1.14 eV has also been clearly shown.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- December 1990
- DOI:
- Bibcode:
- 1990JAP....68.5641M
- Keywords:
-
- Amorphous Silicon;
- Cobalt Compounds;
- Crystal Growth;
- Heterojunctions;
- Single Crystals;
- Disilicides;
- Ion Implantation;
- Microstructure;
- Silicon;
- Vapor Deposition;
- Solid-State Physics