Alloy-disorder-induced intrasubband scattering in a quantum well under an electric field
Abstract
The scattering rates in the lowest subband in a quantum well are calculated for alloy-disorder scattering when an electric field is applied perpendicular to the layer plane. Calculations for the InGaAs quantum well indicate that the scattering rate increases with increase in the electric field.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- October 1990
- DOI:
- 10.1063/1.346353
- Bibcode:
- 1990JAP....68.3443B
- Keywords:
-
- Alloys;
- Electric Fields;
- Electron Scattering;
- Quantum Wells;
- Semiconductors (Materials);
- Electron Transitions;
- Gallium Arsenides;
- Indium Arsenides;
- Infrared Detectors;
- Stimulated Emission;
- Ternary Systems;
- Solid-State Physics