Narrow-gate In0.53Ga0.47As junction field-effect transistors as tunable resistors for long-wavelength integrated optical receivers
Abstract
The fabrication of In0.53Ga0.47As junction field-effect transistors (JFETs) for use as active feedback resistors in integrated transimpedance photoreceivers is described. Transistors using both air-bridge and non-air-bridge technologies are described. Varying the gate-to-source voltage (VGS) allows the output resistance to be tuned continuously between 3 and 40 kilo-ohms with a drain-to-source shunt capacitance of less than 10 fF. The temperature coefficient of the output resistance is between -5 and -20 Ohms/C (for VGS less than the pinch-off voltage). The combination of large resistance and low shunt capacitance can result in high receiver sensitivity without sacrificing amplifier dynamic range. The feedback FETs are fabricated adjacent to 1.8-micron gate JFETs with transconductances of 110 mS/mm and gate-to-source capacitances of 1.3 pF/mm.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1990
- DOI:
- 10.1109/16.62291
- Bibcode:
- 1990ITED...37.2292L
- Keywords:
-
- Electrical Resistance;
- Gallium Arsenides;
- Integrated Optics;
- Jfet;
- Receivers;
- Resistors;
- Gates (Circuits);
- Indium Arsenides;
- Temperature Dependence;
- Tuning;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering