Lifetime broadening in GaAsAlGaAs quantum well lasers
Abstract
Experimental observations of spontaneous emission spectra from GaAsAlGaAs quantum well lasers shown that spectral broadening should be included in any realistic model of laser performance. A model of the lifetime broadening due to intraband Auger processes of the Landsberg type is described and developed for the case of electronelectron scattering in a twodimensional system. The model is applied to the calculation of gain and spontaneous emission spectra and gaincurrent relationships in shortwavelength GaAsAlGaAs quantum well lasers, and the results are compared with those obtained using both a fixed intraband scattering time and one that varies as n exp 1/2, where n is the volume injected carrier density.
 Publication:

IEEE Journal of Quantum Electronics
 Pub Date:
 March 1990
 DOI:
 10.1109/3.52119
 Bibcode:
 1990IJQE...26..443K
 Keywords:

 Aluminum Gallium Arsenides;
 Gallium Arsenide Lasers;
 Quantum Wells;
 Spectral Line Width;
 Carrier Density (Solid State);
 Electron Scattering;
 Emission Spectra;
 Temperature Dependence;
 Threshold Currents;
 Lasers and Masers