94-GHz 0.1-micron T-gate low-noise pseudomorphic InGaAs HEMT's
Abstract
Fabrication of state-of-the-art W-band 0.1-micron T-gate pseudomorphic InGaAs high electron mobility transistors is reported. This device achieved a noise figure of 2.1 dB with an associated gain of 6.3 dB at 93.5 GHz. The device has a maximum gain of 9.6 dB at 94 GHz, which extrapolates to an F(max) of 290 GHz. This noise figure is claimed to be the lowest ever reported for HEMTs fabricated on GaAs substrates at this frequency range.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1990
- DOI:
- 10.1109/55.63047
- Bibcode:
- 1990IEDL...11..585T
- Keywords:
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- Gallium Arsenides;
- High Electron Mobility Transistors;
- Low Noise;
- Microwave Circuits;
- Frequency Response;
- Indium Arsenides;
- Electronics and Electrical Engineering