Schottky diodes of Au on GaAs(1-x)Sb(x)/GaAs n-N heterostructures grown by MBE
Abstract
Au Schottky-barrier heights on MBE-grown n-GaAs(1-x)Sb(x)/N-GaAs heterostructures with x up to 0.26 have been studied. It was found that phi(bn) = 0.9 - 1.77x + 2.89(x squared). or phi(bn) = about 0.77E(g) - 0.20, for x less than 0.26. The pinning position of the Fermi level with respect to the valence-band edge for x less than 0.26 takes the form of E(pin) = -0.52x + 0.53 eV, which also appears to be valid for an x value up to 1.0.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- October 1990
- DOI:
- 10.1109/55.63002
- Bibcode:
- 1990IEDL...11..478Z
- Keywords:
-
- Gallium Antimonides;
- Gallium Arsenides;
- Gold;
- Schottky Diodes;
- Barrier Layers;
- Heterojunction Devices;
- Molecular Beam Epitaxy;
- N-N Junctions;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering