Changes in the surface morphology of InP, GaAs, and InAs under laser irradiation of threshold current density
Abstract
The threshold current densities of laser irradiation corresponding to fusion-like surface changes in InP, GaAs, and InAs crystals are determined. It is shown that the surface morphology changes observed in the crystals are not actually related to surface fusion. The most probable cause of the observed surface changes is crystal decay due to heating below the melting point.
- Publication:
-
Fizika i Khimiia Obrabotki Materialov
- Pub Date:
- April 1990
- Bibcode:
- 1990FizKO.......20D
- Keywords:
-
- Gallium Arsenides;
- Indium Arsenides;
- Indium Phosphides;
- Laser Annealing;
- Semiconductors (Materials);
- Surface Properties;
- Crystal Surfaces;
- Laser Heating;
- Solid-State Physics