High performance resonant tunnelling structures on GaAs substrates
Abstract
GaAs-based resonant tunneling structures of high quality were grown by molecular beam epitaxy. Room temperature peak-to-valley ratios of 4.8 for a GaAs/AlGaAs double barrier quantum well, 4.1 for GaAs/AlGaAs with InGaAs quantum well and 5.9 for GaAs/AlGaAs with adjacent InGaAs 'prewell' were obtained, in connection with reasonable peak current densities.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1990
- DOI:
- 10.1049/el:19900223
- Bibcode:
- 1990ElL....26..340R
- Keywords:
-
- Aluminum Gallium Arsenides;
- Current Density;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Quantum Wells;
- Resonant Tunneling;
- Inelastic Scattering;
- Substrates;
- Volt-Ampere Characteristics;
- Solid-State Physics