Electronic properties of a pulse-doped GaAs structure grown by organometallic vapor phase epitaxy
Abstract
A pulse-doped GaAs structure was grown by organometallic vapor phase epitaxy using a conventional doping technique. Existence of a two-dimensional electron gas confined in this structure was confirmed by Schubnikov-de Haas measurement. Electron mobility and concentration are evaluated by Hall measurement. Electron mobility and concentration dependence on temperature of a pulse-doped GaAs are similar to those of a δ-doped GaAs.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 1990
- DOI:
- 10.1063/1.103469
- Bibcode:
- 1990ApPhL..57.1316N
- Keywords:
-
- Doped Crystals;
- Electric Pulses;
- Electrical Properties;
- Electron Gas;
- Gallium Arsenides;
- Vapor Phase Epitaxy;
- Electron Mobility;
- Magnetic Fields;
- Organometallic Compounds;
- Solid-State Physics