Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used Acheson and Lely α-SiC crystal substrates. We report the CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process. The single-crystal 6H-SiC films were grown on wafers oriented 3° to 4° off the (0001) plane toward the <112¯0> direction. The films, up to 12 μm thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.