Growth of improved quality 3C-SiC films on 6H-SiC substrates
Abstract
Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). We have found that growth on as-grown faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 μm thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 1990
- DOI:
- 10.1063/1.102512
- Bibcode:
- 1990ApPhL..56.1353P
- Keywords:
-
- Crystal Growth;
- Semiconducting Films;
- Silicon Carbides;
- Vapor Deposition;
- Photoluminescence;
- Photomicrographs;
- Substrates;
- Solid-State Physics