The 1MeV-electron irradiation induced defects in epitaxially grown 3C-SiC

Electron spin resonance (ESR) measurements were performed for 1MeV-electron irradiated 3C-SiC crystals epitaxially grown by chemical vapor deposition method. The results indicate the presence of at least four paramagnetic defects (T1-T4 centers). The T1 center was found to consist of isotropic five lines equally spaced at about 1.5 G and to have a g-value of 2.0029 + or - 0.0001. The anisotropic T2 center could be detected below about 100 K. The T3 and T4 centers were both anisotropic at room temperature. Isochronal annealing of electron irradiated 3C-SiC showed that the T1 center was annealed at three stages (150, 350, and 750 C) and that the T3 and T4 centers were annealed at 100 and at 350 C respectively.