Acceptor and exciton states in {InGaAs}/{GaAs} strained quantum wells
Abstract
We calculate variationally the acceptor and the exciton ground state energies in {InGaAs}/{GaAs} strained quantum wells. The difference between these two energies (measurable directly in photoluminescence) turns out to be quite sensitive to the in-plane effective mass of the heavy holes and therefore can be used to determine this parameter.
- Publication:
-
Superlattices and Microstructures
- Pub Date:
- 1989
- DOI:
- 10.1016/0749-6036(89)90175-4
- Bibcode:
- 1989SuMi....6..315T